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| e PTB 20006 4 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 4 Watts, 860-900 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 12 Output Power (Watts) 10 8 6 4 2 0 0.00 200 06 LOT COD E VCC = 25 V ICQ = 50 A f = 900 MHz 0.15 0.30 0.45 0.60 0.75 Input Power (Watts) Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 1.7 35 0.2 -40 to +150 5.0 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20006 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, POUT = 4 W, ICQ = 50 mA, f = 860 MHz) Collector Efficiency (VCC = 25 Vdc, POUT = 4 W, ICQ = 50 mA, f = 860 MHz) Intermodulation Distortion (VCC = 25 Vdc, POUT = 4 W(PEP), ICQ = 50 mA, f1 = 860MHz, f2 = 861 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, POUT = 4 W, ICQ = 50 mA, f = 860 MHz --all phase angles at frequency of test) Symbol Gpe C IMD Min 11.0 45 -- Typ 13.0 -- -25 Max -- -- -- Units dB % dBc -- -- 30:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, POUT = 4 W, ICQ = 50 mA) Z Source Z Load Frequency MHz 860 880 900 R 5.3 5.0 4.9 Z Source jX -5.5 -5.0 -4.4 R 2.4 2.3 2.1 Z Load jX 11.0 11.6 12.0 2 10/28/98 e Typical Performance Gain & Efficiency vs. Frequency 15 14 PTB 20006 (as measured in a broadband circuit) 80 70 60 50 Efficiency (%) Gain (dB) 13 12 Gain (dB) 11 10 9 840 VCC = 25 V ICQ = 50 mA Pout = 4 W 855 870 885 900 40 30 20 915 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1994 EUS/KR 1301-PTB 20006 Uen Rev. D 10-28-98 3 Efficiency (%) |
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